Resistive Switching in Graphene Oxide

Advances in Resistive Switching Memories Based on Graphene Oxide

Memory devices are a prerequisite for today’s information technology. In general, two dif‐ ferent segments can be distinguished. Random access type memories are based on semicon‐ ductor technology. These can be divided into static random access memories (SRAM) and dynamic random access memories (DRAM). In the following, only DRAM will be consid‐ ered, because it is the main RAM technology for s...

Resistive switching in zinc–tin-oxide

Bipolar resistive switching is demonstrated in the amorphous oxide semiconductor zinc–tin-oxide (ZTO). A gradual forming process produces improved switching uniformity. Al/ZTO/Pt crossbar devices show switching ratios greater than 10, long retention times, and good endurance. The resistive switching in these devices is consistent with a combined filamentary/interfacial mechanism. Overall, ZTO s...

Resistive switching behavior of reduced graphene oxide memory cells for low power nonvolatile device application

Graphene Oxide (GO) based low cost flexible electronics and memory cell have recently attracted more attention for the fabrication of emerging electronic devices. As a suitable candidate for resistive random access memory technology, reduced graphene oxide (RGO) can be widely used for non-volatile switching memory applications because of its large surface area, excellent scalability, retention,...

Conducting Nanofilaments in Metal Oxide Resistive Switching Memory

Field-induced resistive switching in metal-oxide interfaces

We investigate the polarity-dependent field-induced resistive switching phenomenon driven by electric pulses in perovskite oxides. Our data show that the switching is a common occurrence restricted to an interfacial layer between a deposited metal electrode and the oxide. We determine through impedance spectroscopy that the interfacial layer is no thicker than 10 nm and that the switch is accom...